HV IGBT

High Voltage IGBT Modules

650V (High speed, low loss IGBT module, Low thermal impedance due to direct liquid cooling, High reliability, high durability module)
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
6in1 IGBT 600 MBB600TV6A
M

*1 M: Mass production, W: Working sample, D: Discontinued

1700V D-Version (Low switching loss)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 1200 MBN1200E17D M
1600 MBN1600E17D M
1800 MBN1800E17DD Soft diode M
2400 MBN2400E17D M
2in1 IGBT 600 MBM600E17D M 2in1 Application Note
1200 MBM1200E17D M 2in1 Application Note
600 MBM600F17D Direct liquid cool M technical paper*2

2in1 Application Note

Chopper 1200 MBL1200E17D M
2in1
Diode
900 MDM900E17D M
1200 MDM1200E17D M

*1 M: Mass production, W: Working sample, D: Discontinued

*2 The first publication of the papers was at PCIM Europe Conference 2010.


1700V E-Version (Low VCE(sat), Soft switching)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 1200 MBN1200E17E M
1800 MBN1800E17E M

*1 M: Mass production, W: Working sample, D: Discontinued


1700V F-Version (Advanced Trench HiGT – sLiPT, Low VCE(sat), Soft switching, Low spike voltage
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 1600 MBN1600E17F W technical paper*2
2400 MBN2400E17F W technical paper*2
3600 MBN3600E17F M technical paper*2
2in1 IGBT 800 MBM800E17F W technical paper*2

2in1 Application Note

1200 MBM1200E17F M technical paper*2

2in1 Application Note

Chopper 1200 MBL1200E17F M technical paper*2
1600 MBL1600E17F M technical paper*2

*1 M: Mass production, W: Working sample, D: Discontinued

*2 The first publication of the papers was at PCIM Europe Conference 2011.

2500V C-Version (Standard 3rd generation Planer IGBT)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 1200 MBN1200E25C M

*1 M: Mass production, W: Working sample, D: Discontinued


2500V E-Version (Fine Planer HiGT – sLiPT, Low VCE(sat), Soft switching)
Package IC(A) Type Name Feature Status*1 Application Note
2in1 IGBT 400 MBM400E25E M 2in1 Application Note

*1 M: Mass production, W: Working sample, D: Discontinued

3300V A-Version (Standard 2nd Generation)
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1
Diode
1200 MDN1200D33 M

*1 M: Mass production, W: Working sample, D: Discontinued


3300V C-Version (Standard 3rd generation Planer IGBT)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 1200 MBN1200E33C M
Chopper 800 MBL800E33C M

*1 M: Mass production, W: Working sample, D: Discontinued


3300V D-Version (Planer IGBT – LiPT, Low switching loss)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 800 MBN800E33D M
800 MBN800E33D-AX Low recovery loss

For high frequency application

M
1200 MBN1200E33D M
1200 MBN1200H33D High isolation package M
2in1 IGBT 400 MBM400E33D-MFR Ultra low switching loss and recovery loss

For high frequency application

W technical paper *2
2in1 Application Note
Chopper 400 MBL400E33D M
800 MBL800E33D M
2in1
Diode
800 MDM800E33D M
1200 MDM1200E33D M

*1 M: Mass production, W: Working sample, D: Discontinued

*2 The first publication of the papers was at PCIM Europe Conference 2012.


3300V E-Version (Planer HiGT – sLiPT, Low VCE(sat), Soft switching)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 800 MBN800E33E M
1200 MBN1200E33E M
Chopper 800 MBL800E33E M

*1 M: Mass production, W: Working sample, D: Discontinued


 

3300V E2-Version (Fine Planer HiGT – sLiPT, Low VCE(sat), Soft switching)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 1000 MBN1000E33E2 M
1500 MBN1500E33E2 M
2in1 IGBT 500 MBM500E33E2 D 2in1 Application Note
500 MBM500E33E2-R

 

M 2in1 Application Note
Chopper 1000 MBL1000E33E2-B M

*1 M: Mass production, W: Working sample, D: Discontinued


3300V E3-Version (Fine Planer HiGT – sLiPT, Soft switching, Low spike voltage, For large Ls circuit series connection)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 1500 MBN1500E33E3
M
2in1 IGBT 250 MBM250H33E3 High isolation package M

*1 M: Mass production, W: Working sample, D: Discontinued


3300V F-Version (Advanced Trench HiGT – sLiPT, Low VCE(sat), High current rating, RoHS compliance)
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1 IGBT 1200 MBN1200F33F

 

M technical paper*2
1800 MBN1800F33F
M technical paper*3
1800 MBN1800FH33F
High isolation package M
2in1 IGBT 450 MBM450FS33F
nHPD2 W
2in1 Diode 1200 MDM1200FH33F
High isolation package M
1in1 SiC 1200 MBN1200F33F-C
W
1800 MBN1800F33F-C
W
2in1 SiC 450 MBM450FS33F-C
nHPD2 W

*1 M: Mass production, W: Working sample, D: Discontinued

*2 The first publication of the papers was at PCIM Europe Conference 2013.

*3 The first publication of the papers was at PCIM Europe Conference 2014.

4500V D-Version (Planer IGBT – LiPT, Low switching loss)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 600 MBN600E45A M
900 MBN900D45A M
2in1 Diode 600 MDM600E45A M
900 MDM900E45A D

*1 M: Mass production, W: Working sample, D: Discontinued


4500V E2-Version (Fine Planer HiGT – sLiPT, Low VCE(sat), Soft switching)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 800 MBN800H45E2 High isolation package W
1200 MBN1200H45E2 High isolation package M
2in1 Diode 800 MDM800H45E2 High isolation package W
1200 MDM1200H45E2 High isolation package M

*1 M: Mass production, W: Working sample, D: Discontinued


 

4500V E2-H-Version (Fine Planer HiGT – sLiPT, Low switching loss)
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1 IGBT 800 MBN800H45E2-H High isolation package W
1200 MBN1200H45E2-H High isolation package M
2in1 IGBT 200 MBM200H45E2-H High isolation package M
2in1 Diode 800 MDM800H45E2-H High isolation package W
1200 MDM1200H45E2-H High isolation package M

*1 M: Mass production, W: Working sample, D: Discontinued


4500V F-Version (Advanced Trench HiGT – sLiPT, Low VCE(sat), High current rating, RoHS compliance)
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1
IGBT
1500  

MBN1500FH45F

 

High isolation package W  

technical paper*2

 

6500V E2-Version (Fine Planer HiGT – sLiPT, Low VCE(sat), Soft switching)
Package IC(A) Type Name Feature Status*1 Application Note
1in1 IGBT 500 MBN500H65E2 High isolation package M
750 MBN750H65E2 High isolation package M
2in1 Diode 500 MDM500H65E2 High isolation package M
750 MDM750H65E2 High isolation package M

*1 M: Mass production, W: Working sample, D: Discontinued

nHPD2
nHPD2 New Packaging Generation. The next standard for High Voltage IGBTs.

From 1700V to 6500V
High Power Density
Low Inductance
Scalable, Easy Paralleling
Standard and High Isolation Package

Package VCES
(V)
IC(A) Type Name
(Update)
Feature Status
*1
2in1
IGBT
1700 900 MBM900FS17G
  • LV Package
    (Standard isolation)
W
1700 900 MBM900FS17G-C
  • LV Package
    (Standard isolation)
  • SiC Diode
W
3300 450 MBM450FS33F
  • LV Package
    (Standard isolation)
W
3300 450 MBM450FS33F-C
  • LV Package
    (Standard isolation)
  • SiC Diode
W
SiC (Advanced Trench HiGT – sLiPT,  SiC Schottky Barrier Diode,  Ultra low recovery loss with SiC diode)
Package VCES
(V)
IC(A) Type Name
(Update)
Status*1 Application Note
1in1 SiC 3300 1200 MBN1200F33F-C
W
1800 MBN1800F33F-C
W
2in1 SiC 1700 900 MBM900FS17G-C
W
3300 450 MBM450FS33F-C
W

*1M:Mass production, W:Working sample, D:Discontinued